n70

AdvancedPowerN-CHANNELENHANCEMENTMODE

OSFET

▼100%AvalancheRatedTestBV

DSS

650V

▼FastSwitchingPerformanceR

DS(ON)

0.6

▼SimpleDriveRequirementI

D

10A

▼RoHSCompliant

Description

AbsoluteMaximumRatings

SymbolUnits

V

DS

Drain-SourceVoltageV

V

GS

Gate-SourceVoltageV

I

D

@T

C

=25℃ContinuousDrainCurrent,V

GS

@10VA

I

D

@T

C

=100℃ContinuousDrain迎新年手抄報圖片 Current,V

GS

@10VA

I

DM

PuldDrainwifi信號差怎么解決 Current1A

P

D

@T

C

=25℃TotalPowerDissipationW

W/℃

E

AS

SinglePulAvalancheEnergy2m環保工作總結 J

I

AR

AvalancheCurre現代美學 ntA

T

STG

℃

T

J

OperatingJunctionTemperatureRange℃

ThermalData

SymbolValueUnit

Rthj-cThermalResistanceJunction-caMax.0.72℃/W

Rthj-aThermalResistanceJunction-ambientMax.62℃/W

Data&specificationssubjecttochangewithoutnotice

Parameter

200519062-1/4

StorageTemperatureRange-55to150

Parameter

AP10N70R/P-A

Rating

650

PbFreePlatingProduct

LinearDeratingFactor

10

40

174

10

6.8

50

1.39

-55to150

G

D

S

TO-262(R)

G

D

S

TO-220(P)

TheTO-220andTO-262packageisuniversallypreferredforallcommercial-

iceissuitedforswitchmodepowersupplies

,DC-ACconvertersandhighcurrenthighspeedswitchingcircuits.

30

G

D

S

AP10N70riesarespeciallydesignedasmainswitchingdevicesfor

universal90~265VACoff-lineAC/-220

andTO-262typeprovidehighblockingvoltagetoovercomevoltagesurge

andsaginthetoughestpowersystemwiththebestcombinationoffast

switching,ruggedizeddesignandcost-effectiveness.

ElectricalCharacteristics@T

j

=25oC(unlessotherwispecified)

BV

DSS

Drain-SourceBreakdownVoltageV

GS

=0V,I

D

=1.0mA650--V

R

DS(ON)

StaticDrain-SourceOn-ResistanceV

GS

=10V,I

D

=5.0A--0.6

V

GS(th)

GateThresholdVoltageV

DS

=V

GS

,I

D

=250uA2-4V

g

fs

ForwardTransconductanceV

DS

=10V,I

D

=5A5--S

I

DSS

Drain-SourceLeakageCurrent(T

j

=25oC)V

DS

=600V,V

GS

=0V--10

uA

Drain-SourceLeakageCurrent(T

j

=150oC)V

DS

=480V

,

V

GS

=0V--100

uA

I

GSS

Gate-SourceLeakageV

GS

=--

nA

Q

g

TotalGateCharge3I

D

=10A-35.957

nC

Q

gs

Gate-SourceChargeV

DS

=480V-8.3-

nC

Q

gd

Gate-Drain("Miller")ChargeV

GS

=10V-11.5-

nC

t

d(on)

Turn-onDelayTime3V

DD

=300V-14.9-

ns

t

r

RiTimeI

D

=10A-19.7-

ns

t

d(off)

Turn-offDelayTimeR

G

=10,V

GS

=10V-51.7-

ns

t

f

FallTimeR

D

=30-23.3-

ns

C

iss

InputCapacitanceV

GS

=0V-19503120

pF

C

oss

OutputCapacitanceV

DS

=15V-630-

pF

C

rss

ReverTransferCapacitancef=1.0MHz-20-

pF

R

gGateResistancef=1.0MHz-23

?

Source-DrainDiode

V

SD

ForwardOnVoltage3T

j

=25℃,I

S

=10A,V

GS

=0V--1.5V

t

rr

ReverRecoveryTime2I

S

=10A,V

GS

=0V,-640-ns

Q

rr

ReverRecoveryChargedI/dt=100A/s-7460-nC

Notes:

idthlimitedbysafeoperatinga理財書 rea.

ngT

j

=25oC,V

DD

=50V,L=1.0mH,R

G

=25,I

AS

=10A.

idth<300us,dutycycle<2%.

2/4

AP10N70R/P-A

100

30V

lOutputCharacteristics

izedBV

DSS

izedOn-Resistance

onTemperature

resholdVoltagev.s.

ReverDiodeJunctionTemperature

3/4

AP10N70P/R-A

0.8

0.9

1

1.1

1.2

255

T

j

,JunctionTemperature(oC)

N

o

r

m

a

l

i

z

e

d

B

V

D

S

S

(

V)

0

4

8

12

16

20

05101520

V

DS

,Drain-to-SourceVoltage(V)

I

D

,

D

r

a

i

n

C

u

r

r

e

n

t

(

A)

T

C

=25oC

10V

6.0V

5.0V

4.5V

V

G

=4.0V

0

1

2

3

255

T

j

,JunctionTemperature(oC)

N

o

r

m

a

l

i

z

e

d

R

D

S

(

O

N)

I

D

=5A

V

G

=10V

0

4

8

12

16

010203040

V

DS

,Drain-to-SourceVoltage(V)

I

D

,

D

r

a

i

n

C

u

r

r

e

n

t

(

A)

T

C

=150oC

10V

6.0V

5.0V

4.5V

V

G

=4.0V

0.1

1

10

00.20.40.60.811.2

V

SD

,Source-to-DrainVoltage(V)

I

S

(

A)

T

j

=150oCT

j

=25oC

0

0.5

1

1.5

255

T

j

,JunctionTemperature(oC)

V

G

S

(

t

h

)

(

V)

lCapacitanceCharacteristics

iveTransientThermalImpedance

argeWaveform

4/4

AP10N70P/R-A

0.01

0.1

1

0.000010.00010.0010.010.11

t,PulWidth(s)

N

o

r

m

a

l

i

z

e

d

T

h

e

r

m

a

l

R

e

s

p

o

n

s

e

(

Rt

h

j

c

)

P

DM

Dutyfactor=t/T

PeakT

j

=P

DM

xR

thjc

+T

C

t

T

0.02

0.01

0.05

0.1

0.2

Dutyfactor=0.5

SinglePul

0.1

1

10

100

1101001000

V

DS

,Drain-to-SourceVoltage(V)

I

D

(

A)

T

c

=25oC

SinglePul

1S

100us

1ms

10ms

100ms

0

4

8

12

16

0204060

Q

G

,TotalGateCharge(nC)

V

G

S

,

G

a

t

e

t

o

S

o

u

r

c

e

V

o

l

t

a

g

e

(

V)I

D

=10A

V

DS

=320V

V

DS

=400V

V

DS

=480V

1

100

10000

29

V

DS

,Drain-to-SourceVoltage(V)

C

(

p

F)

f=1.0MHz

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

V

DS

V

GS

10%

90%

Q

V

G

10V

Q

GS

Q

GD

Q

G

Charge

DC