MITSUBISHI MGF2407A 說明書

2024年3月1日發(作者：沙果樹圖片)

< High-power GaAs FET (small signal gain stage) >

MGF2407A

S to Ku BAND / 0.28W

non - matched

DESCRIPTION

The MGF2407A, power GaAs FET with an N-channel schottky

gate, is designed for u in S to Ku band amplifiers.

FEATURES

? High output power

Po=24.5dBm(TYP.) @f=14.5GHz

? High linear power gain

GLP=8.0dB(TYP.) @f=14.5GHz

? High power added efficiency

P.A.E.=30%(TYP.) @f=14.5GHz,P1dB

APPLICATION

? S to Ku Band power amplifiers

QUALITY

? IG

RECOMMENDED BIAS CONDITIONS

? Vds=10V ? Ids=75mA Refer to Bias Procedure

Absolute maximum ratings

(Ta=25?C)

Symbol Parameter Ratings Unit VGDO

VGSO

ID

IGR

IGF

PT*1

Tch

Tstg

Gate to drain voltage

Gate to source voltage

Drain current

Rever gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

-15 V

Mitsubishi Electric Corporation puts the maximum

-15 V

effort into making miconductor products better

200 mA

and more reliable , but there is always the

-0.6 mA

possibility that trouble may occur with them.

2.5 mA

Trouble with miconductors may lead to personal

1.5 W

injury , fire or property damage. Remember to give

due consideration to safety when making your

175 ?C

circuit designs , with appropriate measure such

-65 to +175?C

as (I) placement of substitutive , auxiliary circuits ,

(ii) u of non-flammable material or (iii) prevention

against any malfunction or mishap.

Keep Safety first in your circuit designs!*1:Tc=25?C

Electrical characteristics

(Ta=25?C)

Symbol Parameter

IDSS

gm

Saturated drain current

Transconductance

Gate to source cut-off voltage

Output power

Linear power gain

Test conditions Limits Unit

VDS=3V,VGS=0V

VDS=3V,ID=0.5mA

VDS=3V,ID=75mA

VDS=10V,ID(RF off)=75mA

f=14.5GHz

ΔVf method

Min. Typ. Max.

200 mA

100 150

- mS

50 65

-1

7

-

-2.5

8

-

-4

-

100

V

dB

?C/W

23 24.5 - dBm

- 30 - %

VGS(off)

P1dB

GLP

P.A.E. Power added efficiency

Thermal resistance

Rth(ch-c) *2

*2 :Channel-ca

Publication Date : Apr., 2011

1

<

High-power GaAs FET (small signal gain stage) >

MGF2407A

S to Ku BAND / 0.28W

non - matched

MGF2407A TYPICAL CHARACTERISTICS( Ta=25deg.C )

Po,PAE vs. Pin (f=14.5GHz)MGF2407A S-parameters( Ta=25deg.C , VDS=10(V),IDS=75(mA) )

f

(GHz)

S Parameters(Typ.)

S11 S21 S12 S22 K

MSG/MAGMagn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) - dB

S11,S22 vs. f S21,S12 vs. f

4 0.968 -112.5 1.766 81.5 0.024 -6.0 0.713 -70.5 0.380 18.7

6 0.929 -135.5 1.279 48.5 0.028 -6.0 0.758 -93.5 0.813 16.6

8 0.891 -157.5 1.147 26.0 0.033 -17.0 0.777 -116.0 0.948 15.4

10 0.833 -180.0 1.111 -5.0 0.041 -30.5 0.782 -139.0 1.176 11.8

12 0.719 158.0 1.080 -36.0 0.050 -50.0 0.793 -164.5 1.583 8.9

14 0.469 133.5 1.030 -85.0 0.059 -82.0 0.818 168.0 2.276 6.1

16 0.172 -165.5 0.967 -153.0 0.073 -123.0 0.911 144.5 1.245 8.2

Publication Date : Apr., 2011

2

<

High-power GaAs FET (small signal gain stage) >

MGF2407A

S to Ku BAND / 0.28W

non - matched

? 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making miconductor products better and more

reliable, but there is always the possibility that trouble may occur with them. Trouble with miconductors

may lead to personal injury, fire or property damage. Remember to give due consideration to safety when

making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary

circuits, (ii) u of non-flammable material or (iii) prevention against any malfunction or mishap.

Notes regarding the materials

?The materials are intended as a reference to assist our customers in the lection of the Mitsubishi

miconductor product best suited to the customer’s application; they do not convey any licen under any

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to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It

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Publication Date : Apr., 2011

3